In this paper. we present a detailed study of nickel-silicide source and drain Schottky barrier MOSFETs on thin-body silicon-on-insulator. We use silicidation induced dopant segregation to lower the effective Schottky barrier height of NiSi source/drain to channel contacts. p-Type Schottky barrier MOSFFTs with boron segregation and n-type Schottky barrier MOSFETs with arsenic segregation show substantially improved electrical characteristics when compared to devices without dopant segregation. An inverse subthreshold slope close to the thermal limit and on-currents which are one order of magnitude higher than for Schottky barrier MOSFETs without dopant segregation are observed for devices with dopant segregation. A statistical analysis of Schottky barrier MOSFETs with dopant segregation reveals a strong dependence on the doping concentration of the electrical performance of both, p- and n-type devices. Source and drain resistances of 560 Omega mu m are extracted for n-type devices on 30 nm thick silicon-on-insulator. (C) 2009 Elsevier Ltd. All rights reserved