화학공학소재연구정보센터
Solid-State Electronics, Vol.54, No.9, 877-882, 2010
Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation
In this paper, we present fully-depleted Schottky barrier MOSFETs with dopant-segregated NiSi source and drain junctions. Schottky barrier MOSFETs with a channel length of 80 nm show high on-currents of 900 mu A/mu m for n-type devices with As segregation at V-gs - V-t = 3 V and V-ds = 1.2V and 427 mu A/mu m for p-type devices with B segregation at V-gs - V-t = -2.8 V and V-ds = -1.2 V. A detailed high-frequency characterization proves the high-performance of the devices with cut-off frequencies f(T) of 117 GHz for n-type and 63 GHz for p-type Schottky barrier MOSFETs and clearly elucidates the effects of extrinsic and intrinsic device parameters as a function of the gate length. (c) 2010 Elsevier Ltd. All rights reserved.