We report on the fabrication of single phase of the Si(1 1 1)-(root 31 x root 31)- In reconstruction surface, observed by scanning tunneling microscopy (STM) at room temperature. By depositing specific amounts of indium atoms while heating the Si(1 1 1)-(7 x 7) substrate at a critical temperature, the single phase of Si(1 1 1)-(root 31 x root 31)-In surfaces could be routinely obtained over the whole surface with large domains. This procedure is certified by our high-resolution STM images in the range of 5-700 nm. Besides, the high resolution STM images of the Si(1 1 1)-(root 31 x root 31)-In surface were also presented. (C) 2009 Elsevier B. V. All rights reserved.