Synthesis of Si-added aluminum oxide (AlSiO) films is attempted as an insulating film with both a wide bandgap and a high dielectric constant. Electrical characteristics of AlSiO films are investigated. Leakage current of the AlO film is suppressed by Si addition and is minimized with Si composition ratio of 12%. Capacitance versus voltage (C-V) measurements are carried out for Au/AlSiO/Si MIS structure. Both flat band shift and hysteresis of the C-V characteristics are suppressed by Si addition. A low leakage current is demonstrated for Au/AlSiO/n-SiC MIS structure. (C) 2009 Elsevier B. V. All rights reserved.