The field emission properties of Ti-DLC films in diode and coplanar device structures were studied. An emission current density of 1.14 A/cm(2) could be obtained at an applied field of 33 V/mu m and the threshold field was 24 V/mu m for the coplanar emission structure. The silicon substrate was found to limit the emission current in the diode structure because of its high resistivity. (C) 2009 Elsevier B. V. All rights reserved.