We have grown silicon dioxide (SiO2) on indiumphosphorous (InP) substrate by liquid phase deposition (LPD) method. With inserting InP wafer in the treatment solution composed of SiO2 saturated hydrofluorosilicic acid (H2SiF6), 0.1 Mboric acid (H3BO3) and 1.74 M diluted hydrochloric acid (HCl), the maximum deposition rate and refractive index for the as-grown LPD-SiO2 film were about 187.5 angstrom/h and 1.495 under the constant growth temperature of 40 degrees C. The secondary ion mass spectroscope (SIMS) and energy dispersive X-ray (EDX) confirmed that the elements of silicon, oxygen, and chloride were found in the as-grown LPD-SiO2 film. On the other hand, the effects of treatment solution incorporated with the hydrogen peroxide (H2O2) that can regulate the concentration of OH ion were also shown in this article. The experimental results represented that the deposition rate decreases with increasing the concentration of hydrogen peroxide due to the reduced concentration of SiO2 saturated H2SiF6 in treatment solution. (C) 2010 Elsevier B.V. All rights reserved.