In this work SnS thin films were electrochemically deposited on ITO coated glass substrate by galvanostatic electrodeposition at different pH of the plating bath. The working electrode used in these studies was low cost high purity graphite rod. The as-deposited films were found to be smooth, pinhole free and well adherent to the substrate with no powdery deposition. EDX measurements revealed that all the SnS films were non-stoichiometric in nature with variation from Sn-excess to S-excess compositions. XRD pattern showed that all the SnS thin films had orthorhombic polycrystalline structure. The direct bandgaps of all the films were found to be in the range 1.54-1.58 eV. ITO/SnS/In structure exhibited linear current-voltage characteristics, establishing the ohmic nature of both ITO/SnS and SnS/In junctions. Furthermore, SnS layer was grown on CdS film using electrodeposition technique. The heterostructure ITO/CdS/SnS/In was characterized under dark and illuminated conditions. From forward biased I-V characteristics several junction parameters like barrier height, diode ideality factor and series resistance of the heterostructure were extracted using Cheung model. (C) 2010 Elsevier B. V. All rights reserved.