Photoluminescence (PL) analysis is used to study porous layers elaborated by electrochemical etching of n(+) Si-doped GaAs substrate with different etching times. Temperature and power dependence photoluminescence (PL) studies were achieved to characterize the effect of the etching time on the deep levels of the n+ Si-doped GaAs. The energy emission at about 1.46 eV is attributed to the band-to-band (B-B) (e-h) recombination of a hole gas with electrons in the conduction band. The emission band is composed of four deep levels due to the complex of (VAsSiGaVGa), a complex of a (Ga vacancy-donor-As vacancy), a (Si-Ga-V-Ga(3-)) defect or Si clustering, and a (gallium antisite double acceptor-effective mass donor pair complex) and which peaked, respectively, at about (0.94, 1, 1.14, and 1.32 eV). The PL intensity behavior as function of the temperature is investigated, and the experimental results are fitted with a rate equation model with double thermal activation energies. (C) 2010 Elsevier B. V. All rights reserved.