Applied Surface Science, Vol.256, No.22, 6770-6774, 2010
Influence of high-pressure hydrogen treatment on structural and electrical properties of ZnO thin films
ZnO thin films were treated by high-pressure hydrogen (H-2). Scanning electron microscope (SEM) images show that the surface morphology of ZnO films has been changed significantly by H-2 treatment. X-ray diffraction patterns show that the Zn(OH)(2) phases formed after H-2 treatment. The X-ray photoelectron spectroscopy results indicate that H atoms were doped into the surface of ZnO by forming H-O-Zn bond. The phenomenon shows that it is easy to form O-H bond in ZnO rather than H interstitial atom under high-pressure hydrogen circumstance. (C) 2010 Elsevier B.V. All rights reserved.