Arsenic doped p-type ZnO thin films were grown on sapphire substrate by magnetron sputtering. As grown films reveal p-type conduction confirmed by Hall-effect and photoluminescence measurements. The p-type film with a hole concentration of 2.16x 10(17) cm(-3), mobility of 1.30 cm(2)/V.s and resistivity of 22.29 Omega-m were obtained at substrate temperature of 700 degrees C. ZnO homojunction synthesized by in-situ deposition of As doped p-ZnO layer on Al doped n-ZnO layer showed p-n diode like characteristics. X-ray pole figure and Transmission Electron Microscope studies confirm epitaxial nature of the films. Photoluminescence results exhibit the peaks associated with donor acceptor pair emission. (C) 2010 Elsevier B.V. All rights reserved.