Micro-ablation of crystalline silicon was performed by irradiating a silicon substrate with femtosecond laser pulses of wavelengths 786 nm or 393 nm focused using a conical axicon assisted with a convex lens. Focusing the laser beam close to the tip of the axicon by means of the lens significantly improved the efficiency of concentration of laser pulse energy at the central spot of the resulting Bessel-Gaussian intensity distribution. As a result, micron-sized holes were formed with the diameter determined by the ablation threshold in the calculated fluence profile. It is possible to predict hole size from the laser pulse energy and the wavelength. Crystalline particles, a few tens of nanometers in size, were formed near the ablated zone. (C) 2010 Elsevier B.V. All rights reserved.