화학공학소재연구정보센터
Electrochemical and Solid State Letters, Vol.13, No.6, II206-II208, 2010
Stick-Slip Transitions in Chemical Mechanical Planarization
As semiconductor device sizes continue to shrink and economic realities drive ever increasing yield targets, achieving wafer scale planarity through the application of chemical mechanical planarization (CMP) has become increasingly challenging. The dynamics of the wafer-pad interface is critical to maintaining this uniformity. Utilizing measured friction coefficients (0.3-0.6), we report on the transitions from a smooth planarization regime to a stick-slip regime and vice versa over a set of two applied vertical loads and three relative velocities during the CMP process. Finally, we note a correlation between time spent in a stick-slip regime and platen velocity. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3380915] All rights reserved.