In this article, we investigated the high quality SiO2 deposited at 80 degrees C by inductively coupled plasma enhanced chemical vapor deposition (CVD). The interface trap density of 1.48x10(10) cm(-2) eV(-1) and breakdown voltage of 5.6 MV/cm were realized successfully despite the low deposition temperature. Thin film transistors (TFTs) have been fabricated under 100 degrees C by excimer laser annealing. The electron mobility can reach 225 cm(2)/V s. The interface density of SiO2 is comparable with that of thermal oxide. The high quality gate oxide is very suitable for fabricating high performance TFTs for large-area flexible displays on plastics. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3430659] All rights reserved.