Resistive switching characteristics of low temperature sol-gel processed (250 degrees C) TiO2 thin films are investigated. The Pt/TiO2/Pt device exhibits bipolar switching with a uniform high resistance state compared to the low resistance state. Reliability and stability of the device is significantly improved by choosing a proper compliance current in the first set operation. The film shows excellent switching properties such as high on/off ratio (> 20), good cycling endurance, and long retention (> 10(4) s) at 85 degrees C. The enhanced switching properties are explained by a physical model based on localized generation/recovery of oxygen vacancy defects near the bottom electrode interface. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3494433] All rights reserved.