A comparative study on charge carrier generation/trapping in HfLaTaON-gated metal-oxide-semiconductor capacitors with various tantalum concentrations was presented under various postdeposition annealing. The trap energy level (Phi(trap)) involved in Frenkel-Poole conduction was estimated using current-voltage characteristics measured at various temperatures. Experimental results show that positive charges are generated in the HfLaTaON gate dielectric bulk. By developing proper Ta concentration in HfLaTaON dielectrics, the enhanced equivalent-oxide-thickness, the interface trap density (D-it), and the Phi(trap) were demonstrated. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3507296] All rights reserved.