In this article, we report the forming-free resistive switching (RS) behavior in the Ru/Y2O3/TaN memory device fabricated with full room temperature process. The dominant conduction mechanisms of low- and high-resistance states are Ohmic conduction (or trapping-detrapping of charges behavior) and Schottky emission, respectively. The tested devices show a high resistance ratio (about 10(4)), nondestructive readout, and reliable data retention (10 year extrapolation at room temperature and 85 degrees C). Ru/Y2O3/TaN structure memory is a very promising candidate for future nonvolatile RS memory applications. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3509144] All rights reserved.