The temperature influence on memory functions of the nanocrystalline ZnO embedded Zr-doped HfO2 high-k capacitor was investigated. Both the memory window and the trapped charge density increased with the increase of temperature. The temperature effect on hole trapping was observed at 125 degrees C, but not at 25 or 75 degrees C. The temperature effect on electron trapping was obvious above 25 degrees C. The interface quality is greatly influenced by the temperature, which was detected on the leakage current density-gate voltage, capacitance-voltage (C-V), and conductance-gate voltage curves. The sample temperature affects the carrier generation and transport mechanisms, which are responsible for the memory function changes. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3514101] All rights reserved.