NaNbO3, (AgNbO3)(0) (5)(NaNbO3)(0) (5) and AgNbO3 films on FTO conducting glass substrates were fabricated by pulsed laser deposition at 973 K for 1 hunder 10 Paoxygen pressure with the laser energy of 400 ml The energy band structure and photoelectrochemical behavior were investigated by measuring the flat band potential (V-tb) and photocurrent. The optical band gaps for NaNbO3, (AgNbO3)(0) (5)(NaNbO3)(0) (5) and AgNbO3 are 3 50.3 25 and 2 93 eV. respectively And the V-fb, for the NaNbO3, (AgNbO3)(0) (5)(NaNbO3)(0) (5) and AgNbO3 films are -0 91, -0.76 and -088 V (vs Ag/AgCl), respectively, indicating that the conduction band bottom of (AgNbO3)(0) (5)(NaNbO3)(0) (5) is more positive than those of NaNbO3 and AgNbO3, and the valence band top becomes more posit we in order of AgNbO3.(AgNbO3)(0 5)(NaNbO3)(0 5) and NaNbO3 The AgNbO3 film shows the largest photocurrent density due to the more light harvesting, the relative higher donor density and large contact surface area between the electrode and the electrolyte solution The (AgNbO3)(0) (5)(NaNbO3)(0 5) film shows lowest photocurrent due to lower donor density (C) 2010 Elsevier Ltd All rights reserved