To investigate the effects of tellurium (Te) deposition rate on the properties of Cu-In-Te based thin films (Cu/In=0.30-0.31), the films were grown on both bare and Mo-coated soda-lime glass substrates at 200 degrees C by co-evaporation using a molecular beam epitaxy system. The microstructural properties were examined by means of scanning electron microscopy and X-ray diffraction. The crystalline quality of the films was improved with increase in the deposition rate of Te, and exhibited a single CuIn3Te5 phase with a highly preferred (1 1 2) orientation. Te-deficient film (Te/(Cu + In)=1.07) grown with a low Te deposition rate showed a narrow bandgap of 0.99 eV at room temperature. The solar cell performance was affected by the deposition rate of Te. The best solar cell fabricated using CuIn3Te5 thin films grown with the highest deposition rate of Te (2.6 nm/s) yielded a total area (0.50 cm(2)) efficiency of 4.4% (V-oc=309 my, J(sc)=28.0 mA/cm(2), and FF=0.509) without light soaking. (C) 2010 Elsevier B.V. All rights reserved.