(1 0 0)-oriented beta-FeSi2 films were epitaxially grown on 3C-SiC-buffered Si(1 0 0) substrates by co-sputtering iron and silicon. The full-width at half maximum of the rocking curve of the beta-FeSi2 800 diffraction peaks was 1.8 degrees. The epitaxial relationship between beta-FeSi2 and 3C-SiC was identified as Type B. The domain size leading to minimum domain coherent strain was smaller when the epitaxial relationship was Type B than when it was Type A, indicating that the epitaxial relationship between the beta-FeSi2 and 3C-SiC was Type B. (C) 2010 Elsevier B.V. All rights reserved.