Besides the applications as optical functional materials, tellurium oxides also have attracted interest as microwave dielectric materials. Most TeO2-based binary and ternary system have large negative temperature coefficient of resonant frequency (tau(f)), which is not compatible for the low-temperature cofired ceramic. To compensate tau(f) close to zero, two single-phase predecessors of BaTe4O9 and TiTe3O8 are synthesized in air at 530-560 and 620-680 A degrees C, respectively. The two predecessors show exceptional dielectric properties and their tau(f) are opposite. The BaO-TiO2-TeO2 ternary system compounds are investigated by adjusting the ratio of BaTe4O9 and TiTe3O8 and sintered at 520-580 A degrees C to develop the microwave properties and compensate the tau(f). After sintered at 560 A degrees C, the ceramic sample with the composition of 0.47BaTe(4)O(9)-0.53TiTe(3)O(8) exhibits a dielectric permittivity of 28, a Q x f-value of 12,200 GHz, and a tau(f) of 4.0 ppm/A degrees C measured at 10 GHz.