REMOTE PLASMA ENHANCED METAL ORGANIC CHEMI- CAL VAPOR DEPOSITION OF TiN FOR DIFFUSION BARRIER

Yun JY; Rhee SW

Korean Journal of Chemical Engineering, Vol.13, No.5, 510-514, September, 1996

TiN films were deposited with remote plasma metal organic chemical vapor deposition (MOCVD) from tetrakis-diethyl-amido-titanium (TDEAT) at substrate temperature of 250-500℃ and plasma power of 20-80 W. The growth rate using N₂ plasma is slower than that with H₂ plasma and showed 9.33 kcal/mol of activation energy. In the range of 350-400℃, higher crystallinity and surface roughness were observed and resistivity was relatively low. As the temperature increased to 500℃, randomely oriented structure and smooth surface with higher resistivity were obtained. At low deposition temperature, carbon was incorporated as TiC phase, as the deposition temperature increases, carbon was found as hydrocarbon. At 40 W of plasma power, higher crystallinity and rough surface with lower resistivity were obtained and increasing the plasma power to 80 W leads to low crystallinity, smooth surface and higher resistivity. It may be due to the incorporation of hydrocarbon decomposed in the gas phase. Surface roughness was found to be related to the crystallinity of the film.

Keywords:MOCVD;TiN;TDEAT;Plasma;Diffusion Barrier

[References]

Charatan RM, Gross ME, Eaglesham DJ, J. Appl. Phys., 76(7), 4377 (1994)
Corneille JS, Chen PJ, Truong CM, Oh WS, Goodman DW, J. Vac. Sci. Technol. A, 13(3), 1116 (1995)
Harper JME, Hornstrom SE, Thomas O, Charai A, J. Vac. Sci. Technol. A, 7(3), 875 (1989)
Ianno NJ, Amed AU, Englebert DE, J. Electrochem. Soc., 136(1), 276 (1990)
Ishihara K, Yamazaki K, Hamada H, Jpn. J. Appl. Phys., 29(10), 2103 (1990)
Kulisch W, Surf. Coat. Technol., 59, 1993 (1993)
Lawrence H, Bernard RZ, J. Electrochem. Soc., 139(12), 3603 (1992)
Manory RR, Surf. Coat. Technol., 63, 85 (1994)
Price JB, Borland O, Selbred S, Thin Solid Films, 236, 311 (1993)
Prybyla JA, Chang CM, Dubois LH, J. Electrochem. Soc., 140(9), 2695 (1993)
Raaijmakers IJ, Thin Solid Films, 247(1), 85 (1994)
Roberts B, Harrus A, Jackson RL, Solid State Technol., Feb., 69 (1995)
Sherman A, J. Electrochem. Soc., 137(6), 1892 (1990)
Sun SC, Tsai MH, Thin Solid Films, 253(1-2), 440 (1994)
Travis EO, Fiordalice RW, Thin Solid Films, 236, 325 (1993)

[Referenced By]

[1] Charatan RM, Gross ME, Eaglesham DJ, J. Appl. Phys., 76(7), 4377 (1994)

[2] Corneille JS, Chen PJ, Truong CM, Oh WS, Goodman DW, J. Vac. Sci. Technol. A, 13(3), 1116 (1995)

[3] Harper JME, Hornstrom SE, Thomas O, Charai A, J. Vac. Sci. Technol. A, 7(3), 875 (1989)

[4] Ianno NJ, Amed AU, Englebert DE, J. Electrochem. Soc., 136(1), 276 (1990)

[5] Ishihara K, Yamazaki K, Hamada H, Jpn. J. Appl. Phys., 29(10), 2103 (1990)

[6] Kulisch W, Surf. Coat. Technol., 59, 1993 (1993)

[7] Lawrence H, Bernard RZ, J. Electrochem. Soc., 139(12), 3603 (1992)

[8] Manory RR, Surf. Coat. Technol., 63, 85 (1994)

[9] Price JB, Borland O, Selbred S, Thin Solid Films, 236, 311 (1993)

[10] Prybyla JA, Chang CM, Dubois LH, J. Electrochem. Soc., 140(9), 2695 (1993)

[11] Raaijmakers IJ, Thin Solid Films, 247(1), 85 (1994)

[12] Roberts B, Harrus A, Jackson RL, Solid State Technol., Feb., 69 (1995)

[13] Sherman A, J. Electrochem. Soc., 137(6), 1892 (1990)

[14] Sun SC, Tsai MH, Thin Solid Films, 253(1-2), 440 (1994)

[15] Travis EO, Fiordalice RW, Thin Solid Films, 236, 325 (1993)