Journal of the American Chemical Society, Vol.132, No.19, 6634-6634, 2010
Resistive-Switching Memory Effects of NiO Nanowire/Metal Junctions
We have demonstrated the construction of highly stable resistive switching (RS) junctions with a metal/NiO nanowire/metal structure and used them to elucidate the crucial role of redox events in the nanoscale bipolar RS. The presented approaches utilizing oxide nanowire/metal junctions offer an important system and platform for investigating nanoscale RS mechanisms of various oxide materials.