Palladium-induced crystallization of germanium at 350 degrees C using different Pd thicknesses is carried out and the qualities of the poly-Ge films obtained are characterized. The crystal qualities of the Ge films are highly dependent on the thickness of Pd used, in which 55 angstrom is the optimal thickness to induce crystallization of a 418 nm thick Ge film. When a Pd layer thicker than 55 angstrom is used, it not only deteriorates the crystal quality of Ge but also increases the concentrations of PdGe and Pd2Ge in the Ge layer. The sheet resistance of the poly-Ge film decreases with increasing crystalline fraction when the Pd layer is thinner than 70 angstrom because the amount of Pd germanides is low, and the opposite trend is observed when the Pd layer is thicker than 70 angstrom due to the high concentration of Pd germanides in the film. The complex dielectric constants of the poly-Ge films show not only the transition energy E-1 and E-1+Delta(1) peaks but also two other peaks at photon energies of 1.6 and 1.8 eV, which possibly are due to the presence of Pd germanides in the Ge layer. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3428666] All rights reserved.