We investigate Ga0.33In0.67P quantum dots in AlGaInP-based light emitting diode (LED) structures appropriate for special lighting applications in terms of structural behaviors and present the results for a device emitting a 700 nm spectrum. The Ga0.33In0.67P materials form three-dimensional dots at a density of 3 x 10(9) cm(-2) in which the relatively irregular and large islands are formed due to an insufficient strain energy of 1.37% lattice mismatch. The temperature-dependent photoluminescence (PL) data show a wetting layer spectrum at 584 nm, indicating a Stranski-Krastanov growth mode. The PL spectrum of the quantum dots is well maintained to 300 K. These data indicate that the Ga0.33In0.67P materials are appropriate for use as an active layer of 700 nm emitting LEDs. The device performance shows normal p-n diode behavior with a forward voltage of 1.79 V at 20 mA and a maximum light output power of 33.8 mW at 480 mA. The low wavelength shift of 4.08 x 10(-3) nm/mA further confirms the quantum dot nature of the emitting layer. (C) 2010 The Electrochemical Society. [DOI:10.1149/1.3459908] All rights reserved.