At present there is no quick and simple method to determine the type and orientation of grains in multicrystalline silicon, which is commonly used for photovoltaic applications. In this paper, a novel method for performing such measurements is described. A laser beam is reflected off an anisotropically etched multicrystalline silicon surface. An optimized KOH-based etch produces defined facets with {001}, {111}, {113}, similar to{133}, and similar to{335} orientations. Reflections from the different facets then produce spots in a reflection pattern produced on a suitably placed screen. The pattern produced is characteristic of the grain type, with {001}-, {110}-, and {111}-type grains being clearly distinguished in over 90% of the cases. An analysis of the position of the spots allows the orientation of the facets producing them to be determined. These orientations are used to determine the orientations of the underlying grain to within similar to 6 degrees relative to measurements made by electron backscatter diffraction. An algorithm has been developed, which automates this quantification of grain orientation with a success rate of similar to 90% on {001} and {110}-type grains. (C) 2010 The Electrochemical Society. [DOI:10.1149/1.3458862] All rights reserved.