High quality indium tin oxide (ITO) thin films were grown by the nanocluster deposition (NCD) technique at a low temperature. The ITO films were examined using a four-point probe and Hall probe measurements, scanning electron microscopy, atomic force microscopy, X-ray fluorescence, X-ray diffraction, and X-ray photoelectron spectroscopy. The lowest resistivity (1.8 X 10(-4) Omega cm) and highest optical transparency (92%) were obtained for films containing a tin concentration of 7 wt %. The absence of hydroxyl groups, organic contamination, and carbon content in the films grown at a low temperature of 250 degrees C by NCD indicates the complete decomposition of metallorganic precursors. Excellent optoelectronic and surface chemical properties can be favorable for a transparent electrode in many display technologies. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3467802] All rights reserved.