Magnesium doped ZnO (Zn0.75Mg0.25O) polycrystalline thin film was deposited on p-type Si by sol-gel method, and the same was annealed at 1000 C in oxygen rich environment. The magnesium doping in lattice structure of zinc oxide was examined by X-ray diffraction measurements. The dielectric phase transition observed at 378 K indicated the existence of ferroelectric properties in the deposited film. The ferroelectricity in the deposited film was confirmed by the polarization and electric field hysteresis curve. Maximum values of the spontaneous polarization and coercive field were found to be 0.29 mu C/cm(2) and 18 kV/cm, respectively. The clockwise rotation in capacitance and voltage hysteresis loop of the deposited film on p-type Si indicated that the charge compensation on the Si surface was induced by the ferroelectric polarization. The grain size and microstructure were analyzed by atomic force microscopy. (c) 2010 The Electrochemical Society. [DOI: 10.1149/1.3511788] All rights reserved.