The characteristics of a metal-oxide-semiconductor (MOS( capacitor with liquid phase deposited SiO2/TiO2 stacked dielectrics on p-type (NH4)(2)S-treated InP(100) were investigated. The leakage currents of an InP MOS capacitor with TiO2 as a dielectric are 1.66 x 10(-7) and 6.83 x 10(-7) A/cm(2) at +/- 0.5 MV/cm, respectively. The leakage current is mainly from the thermal ionic emission. The dielectric constant is 43.4. With the deposition of 3 nm high bandgap SiO2 on TiO2 as stacked dielectrics, the leakage current can be improved to 2.14 x 10(-9) and 6.43 x 10(-9) A/cm(2) at (+)0.5 MV/cm, respectively. The dielectric constant is 29.5. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3512989] All rights reserved.