In this paper, a systematic approach using HfO2, ZrO2, and TiO2 with TiN or Ti/TiN electrode has been conducted to research the best material for resistance random access memory device integration. From the experimental results and proposed model, the proper electrical properties such as the stability of switching variation, low current and voltage operation, long endurance and retention characteristics are obtained with a TiN/Ti/HfO2/TiN memristor structure. It is found that adequate initial resistance which makes forming process necessary can be controlled by adjusting the concentration of oxygen vacancy inside transition metal oxide. HfO2 and ZrO2 are found to have necessary heat of formation to create adequate oxygen vacancy inside when they are attached to reactive Ti. Also maintaining low parasitic capacitance dependent on the crystallinity of the transition metal oxide is also crucial to limit abnormally high first switching current in scale downed device. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3552701] All rights reserved.