P-type phosphorus-doped ZnO (ZnO:P) films were fabricated by atomic layer deposition of ZnO upon the amorphous silica substrates, which were prepared by coating the spin-on dopant consisted of P2O5 and SiO2 on silicon wafers. Post-deposition thermal treatments were carried out to diffuse the phosphorus dopants into ZnO and to activate the phosphorus-related acceptor states. The ZnO:P films exhibited p-type conductivity with an average hole concentration of 1.05 x 10(17) cm(-3). Significant spectral peaks associated with the acceptor states appeared in the low-temperature photoluminescence spectra of the p-type ZnO:P films. Optically-pumped stimulated emission around 393 nm was observed at room temperature, thereby indicating a good optical quality of the p-type ZnO:P film. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3567019] All rights reserved.