ZrO2 films doped with Y, Gd, Dy, and Ce at a concentration of similar to 13 cation atom % were deposited by a sol-gel technique, and the early-stage dopant effect on the stabilization of the high temperature phase and dielectric properties was systematically compared after a low-temperature annealing process (400 degrees C). The high temperature phase formation of the ZrO2 films was hindered by the Y, Gd, and Dy doping, thereby reducing the dielectric constant. In addition, the hysteresis was significantly increased via electron trapping, which was attributed to the increase in the number of oxygen vacancies possibly due to the difference in the valence number of the dopants with that of the substituted Zr atoms. However, the dielectric constant of the ZrO2 film doped with tetravalent Ce atoms increased without retarding the stabilization of the high temperature phase and degrading the hysteresis characteristics. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3562971] All rights reserved.