MODELING OF SiO<SUB>2</SUB> CVD FROM TEOS/OZONE IN A SEPARATE - GAS -INJECTION REACTOR

Kim EJ; Gill WN

Korean Journal of Chemical Engineering, Vol.15, No.1, 56-63, January, 1998

MODELING OF SiO₂ CVD FROM TEOS/OZONE IN A SEPARATE - GAS -INJECTION REACTOR

A mathematical model has been developed to study the chemical vapor deposition of SiO₂ from TEOS and ozone in a cold-wall separate-gas-injection reactor related to the commercial Watkins-Johnson 7000. The model employs the kinetic scheme proposed previously by Kim and Gill. Control-volume-based finite difference methods are used to solve for the two-dimensional fluid velocity, temperature, and concentration distributions. The model successfully describes experimental data of film thickness profiles available. We systematically investigate the dependence of deposition rate on operating conditions including O₃/TEOS ratio, reactant flow rate, and injector-wafer spacing. The predicted results indicate that a high TEOS flow rate and an O₃/TEOS ratio of around 30 are preferable for obtaining high deposition rates and good film quality.

Keywords:CVD;SiO₂ Film;TEOS/Ozone Process;Separate-Gas-Injection

[References]

Chin BL, VandeVen EP, Solid State Technol., April, 119 (1988)
Danckwerts PV, Chem. Eng. Sci., 2, 1 (1953)
Dobkin D, with Watkins-Johnson, Private Communication (1993)
Fujino K, Nishimoto Y, Tokumasu N, Maeda K, J. Electrochem. Soc., 137, 2883 (1990)
Ikeda Y, Numasawa Y, Sakamoto M, J. Electron. Mater., 19, 45 (1990)
Jeon BJ, Oh IH, Lim TH, Jung IH, HWAHAK KONGHAK, 35(3), 374 (1997)
Kim EJ, Gill WN, J. Cryst. Growth, 140, 308 (1994)
Kim EJ, Gill WN, J. Cryst. Growth, 140, 315 (1994)
Kim EJ, Gill WN, J. Electrochem. Soc., 141(12), 3462 (1994)
Li J, McVittie JP, Ferziger JH, Saraswat KC, "Profile Simulation of APCVD Oxide from Ozone TEOS," Techcon'93, 463, Sep. 28-30 (1993)
Murase K, Yabumoto N, Komine Y, J. Electrochem. Soc., 140, 1722 (1993)
Nguyen S, Dobuzinsky D, Harmon D, Gleason R, Fridman S, J. Electrochem. Soc., 137, 2209 (1990)
Nishimoto Y, Tokumasu N, Fujino K, Maeda K, "Dielectric Film Deposition by Atmospheric Pressure and Low Temperature," IEEE VMIC Conference, 382, June 12-13 (1989)
Park YB, Kang JK, Rhee SW, HWAHAK KONGHAK, 34(2), 143 (1996)
Patankar SV, "Numerical Heat Transfer and Fluid Flow," Hemisphere Publishing Corp., Washington, D.C. (1980)
Popovich MO, Egorova GV, Filippov Yu V, Russ. I. Phys. Chem., 59, 165 (1985)
Shareef IA, Rubloff GW, Anderle M, Gill WN, Cotte J, Kim DH, J. Vac. Sci. Technol. B, 13(4), 1888 (1995)

[Referenced By]

[1] Chin BL, VandeVen EP, Solid State Technol., April, 119 (1988)

[2] Danckwerts PV, Chem. Eng. Sci., 2, 1 (1953)

[3] Dobkin D, with Watkins-Johnson, Private Communication (1993)

[4] Fujino K, Nishimoto Y, Tokumasu N, Maeda K, J. Electrochem. Soc., 137, 2883 (1990)

[5] Ikeda Y, Numasawa Y, Sakamoto M, J. Electron. Mater., 19, 45 (1990)

[6] Jeon BJ, Oh IH, Lim TH, Jung IH, HWAHAK KONGHAK, 35(3), 374 (1997)

[7] Kim EJ, Gill WN, J. Cryst. Growth, 140, 308 (1994)

[8] Kim EJ, Gill WN, J. Cryst. Growth, 140, 315 (1994)

[9] Kim EJ, Gill WN, J. Electrochem. Soc., 141(12), 3462 (1994)

[10] Li J, McVittie JP, Ferziger JH, Saraswat KC, "Profile Simulation of APCVD Oxide from Ozone TEOS," Techcon'93, 463, Sep. 28-30 (1993)

[11] Murase K, Yabumoto N, Komine Y, J. Electrochem. Soc., 140, 1722 (1993)

[12] Nguyen S, Dobuzinsky D, Harmon D, Gleason R, Fridman S, J. Electrochem. Soc., 137, 2209 (1990)

[13] Nishimoto Y, Tokumasu N, Fujino K, Maeda K, "Dielectric Film Deposition by Atmospheric Pressure and Low Temperature," IEEE VMIC Conference, 382, June 12-13 (1989)

[14] Park YB, Kang JK, Rhee SW, HWAHAK KONGHAK, 34(2), 143 (1996)

[15] Patankar SV, "Numerical Heat Transfer and Fluid Flow," Hemisphere Publishing Corp., Washington, D.C. (1980)

[16] Popovich MO, Egorova GV, Filippov Yu V, Russ. I. Phys. Chem., 59, 165 (1985)

[17] Shareef IA, Rubloff GW, Anderle M, Gill WN, Cotte J, Kim DH, J. Vac. Sci. Technol. B, 13(4), 1888 (1995)