THE INFLUENCE OF CHEMICAL PASSIVATION ON THE PZT/Pt ELECTRODE INTERFACE

Jeon BS; Yoo JS

Korean Journal of Chemical Engineering, Vol.15, No.1, 85-89, January, 1998

It has been recognized that the interdiffusion of atomic species between a PZT film and the Pt bottom electrode leads to the gradual degradation of a PZT capacitor. In order to prevent this interdiffusion, experimental studies on chemical passivation to the bottom electrode surface were carried out by the sulfurization method. It was observed that a sulfur layer was built up on the Pt substrate with small grains, which resulted in a structural change at the Pt surface. Atomic force microscopy (AFM) showed that the film roughness of the Pt surface was increased by sulfur treatment. Pb(Zr_0.5Ti_0.5)O₃(PZT) thin films were prepared on a Pt/Ti/SiO₂/Si bottom electrode by spin-coating techniques. The microstructure and the preferred orientation of the PZT films were shown to depend on the sulfurtreated electrode. The PZT capacitor on a clean Pt electrode was confirmed to be ferroelectric with Pr=17.7 μC/㎠ and Ec=65 kV/cm from the P-E hysteresis curves. The fatigue behavior of a PZT film capacitor prepared on a sulfurtreated one was observed to be relaxed, but the absolute value of Pr was paid off.

Keywords:Ferroelectric PZT Film;Sol-Gel Method;Chemical Passivation;Fatigue Property

[References]

Chung CW, Kim D, Korean J. Chem. Eng., 14(2), 136 (1997)
Desu SB, Yoo IK, "Ferroelectric PbZrxTi1-xO3 Thin Films Grown by Organometallic Chemical Vapor Depositon," Proc. 4th Int. Symp. Integrated Ferroelectrics, Monterey, 640 (1990)
Dormans GJM, Keijer M, Veldhaven PJ, "Ferroelectric PbZrxTi1-xO3 Thin Films Growns by Organometallic Chemical Vapor Deposition," Proc. Symp. Mat. Res. Soc., 203 (1992)
Maeda F, Watanabe Y, Oshima M, Appl. Phys. Lett., 62(3), 297 (1993)
Makamura T, Nakao Y, Kamisawa A, Takasu H, Jpn. J. Appl. Phys., 33, 5207 (1994)
Mihara T, Watanabe H, Carlos AP, Jpn. J. Appl. Phys., 33, 3996 (1994)
Nannichi Y, Oigawa H, "The Effects of Sulfur on the Surface of III-IV Component Semiconductors," Extended Abstracts of 22nd Int. Conf. on Solid State Devices and Materials, Sendai, 453 (1990)
Ohno H, Kamanishi H, Akagi Y, Nakajima Y, Hijikata T, Jpn. J. Appl. Phys., 29(11), 2473 (1990)
Oigawa H, Fan J, Nannichi Y, Sugahawa H, Oshima M, Jpn. J. Appl. Phys., 30, L322 (1991)
Scott JF, Melnick BM, Araujo CA, McMillan LD, Zuleeg R, "d.c. Leakage Currents in Ferroelectric Memories," Integrated Ferroelectrics, 1, 323 (1992)
Spierings GACM, Ulenaers MJE, Kampschoer GLM, van Hal HAM, Larsen PK, J. Appl. Phys., 70(4), 2290 (1991)

[Referenced By]

[1] Chung CW, Kim D, Korean J. Chem. Eng., 14(2), 136 (1997)

[2] Desu SB, Yoo IK, "Ferroelectric PbZrxTi1-xO3 Thin Films Grown by Organometallic Chemical Vapor Depositon," Proc. 4th Int. Symp. Integrated Ferroelectrics, Monterey, 640 (1990)

[3] Dormans GJM, Keijer M, Veldhaven PJ, "Ferroelectric PbZrxTi1-xO3 Thin Films Growns by Organometallic Chemical Vapor Deposition," Proc. Symp. Mat. Res. Soc., 203 (1992)

[4] Maeda F, Watanabe Y, Oshima M, Appl. Phys. Lett., 62(3), 297 (1993)

[5] Makamura T, Nakao Y, Kamisawa A, Takasu H, Jpn. J. Appl. Phys., 33, 5207 (1994)

[6] Mihara T, Watanabe H, Carlos AP, Jpn. J. Appl. Phys., 33, 3996 (1994)

[7] Nannichi Y, Oigawa H, "The Effects of Sulfur on the Surface of III-IV Component Semiconductors," Extended Abstracts of 22nd Int. Conf. on Solid State Devices and Materials, Sendai, 453 (1990)

[8] Ohno H, Kamanishi H, Akagi Y, Nakajima Y, Hijikata T, Jpn. J. Appl. Phys., 29(11), 2473 (1990)

[9] Oigawa H, Fan J, Nannichi Y, Sugahawa H, Oshima M, Jpn. J. Appl. Phys., 30, L322 (1991)

[10] Scott JF, Melnick BM, Araujo CA, McMillan LD, Zuleeg R, "d.c. Leakage Currents in Ferroelectric Memories," Integrated Ferroelectrics, 1, 323 (1992)

[11] Spierings GACM, Ulenaers MJE, Kampschoer GLM, van Hal HAM, Larsen PK, J. Appl. Phys., 70(4), 2290 (1991)