Clean Technology, Vol.17, No.2, 103-109, June, 2011
무전해 동도금 Throwing Power (TP) 및 두께 편차 개선
Improvement of the Throwing Power (TP) and Thickness Uniformity in the Electroless Copper Plating
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초록
전기도금의 seed layer를 형성하는 무전해 동도금 공정의 throwing power (TP)와 두께 편차를 개선하기 위한 공정 최적화 방법을 제시하였다. 실험계획법 (DOE)을 이용하여 가능한 모든 공정 인자들 가운데 TP와 두께 편차에 가장 큰 영향을 미치는 주요 인자를 파악해 보았다. 균일성을 가진 via filling을 위해서는 도금액 내의 Cu 이온의 농도를 높여주고 도금 온도를 낮추어 주는 것이 바람직한 것으로 판단되었으며 이는 표면 반응성의 측면에서 설명되었다. Kinetic Monte Carlo (MC) 모사가 이를 시각화하기 위해 도입되었으며 실험에서 관찰된 현상을 정성적으로 무리 없이 설명할 수 있었다. 실험계획법을 이용한 체계적인 실험과 이를 뒷받침하는 이론적인 모사가 결합된 본 연구의 접근법은 관련 공정에서 유용하게 활용될 수 있을 것이다.
The process optimization was carried out to improve the throwing power (TP) and the thickness uniformity of the electroless copper (Cu) plating, which plays a seed layer for the subsequent electroplating. The DOE (design of experiment) was employed to screen key factors out of all available operation parameters to influence the TP and thickness uniformity the most. It turned out that higher Cu ion concentration and lower plating temperature are advantageous to accomplish uniform via filling and they are accounted for based on the surface reactivity. To visualize what occurred experimentally and evaluate the phenomena qualitatively, the kinetic Monte Carlo (MC) simulation was introduced. The combination of neatly designed experiments by DOE and supporting theoretical simulation is believed to be inspiring in solving similar kinds of problems in the relevant field.
Keywords:Electroless copper plating;Throwing power;Via;Thickness uniformity;PCB (Printed Circuit Board)
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