Semiconducting films of (n-type) ZnSe and (p-type) nitrogen-doped ZnSe were electrodeposited by a linear-sweep voltammetric technique on to a substrate of fluorine-tin oxide (FM) glass ceramics. The films were characterized by scanning electron microscopy, energy-dispersive X-ray analysis and grazing-incidence X-ray diffraction. The results indicated that the material was deposited uniformly over the substrate, forming clusters when the Zn content of the bath was 0.1 mol L-1 and a film when it was 0.2 or 0.3 mol L-1. The effectiveness of doping the films with nitrogen by adding ammonium sulfate to the deposition solution was assessed by measuring the film-electrolyte interface capacitance (C) at various applied potentials (E-ap) and plotting Mott-Schottky curves (C-2 vs E-ap), whose slope sign was used to identify p-type ZnSe. (C) 2009 Elsevier B.V. All rights reserved.