Results from molecular dynamics simulations of continuous 50-200 eV Ar+ bombardment on wurtzite and zinc blende GaN surfaces are reported. A new analytical bond-order potential, originally developed for growth process studies, is used to investigate the low-energy physical sputtering of GaN compounds. Preferential sputtering of N atoms is initially observed up to 3.5 x 10(15) ions/cm(2) fluence, after which the layers reach steady state sputtering. The crystalline structure of the GaN sample does not have a major influence on the sputtering yield due to the rapid amorphization of the top surface after a few hundred impacts. Concentration depth profiles indicate a surface enrichment in gallium with a N/Ga concentration ratio equal to 0.59 +/- 0.1 for 100 eV bombardment, in agreement with published experimental studies. For the same conditions, Ga, N, and GaN species represent 25, 60, and 7% of the sputtered products. A significant fraction of those products leave the surface with kinetic energies sufficiently high to damage the passivation layers on sidewalls during etching processes dominated by physical bombardment. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3460904]