Solid-State Electronics, Vol.54, No.10, 1192-1196, 2010
A high efficient, low power, and compact charge pump by vertical MOSFETs
This paper examines the impact on the charge pump performance by utilizing the merit of the back-bias effect free for the vertical MOSFETs. The simulation results show that the charge pump circuits composed of the vertical MOSFETs can both shrink the charge pump area and lower the power consumption by more than 90% in comparison with the conventional charge pump circuits composed of the planar MOSFETs. (C) 2010 Elsevier Ltd. All rights reserved.