We have fabricated self-aligned thin-film transistors (TFTs) using a ultra-low temperature (T < 200 degrees C) polycrystalline silicon process on stainless steel foil substrates. The overall processing scheme and technical details were discussed from the viewpoint of electrical and mechanical stabilities. Large grain poly-Si films were obtained with sequential lateral solidification (SLS) method. Plasma enhanced atomic layer deposition (PEALD) method was used to form Al2O3 gate dielectric films. The TFT performances were enhanced by plasma oxidation of the polycrystalline Si surface prior to Al2O3 gate dielectric film deposition. The fabricated TFT showed a field effect mobility of 95 cm(2)/Vs, a threshold voltage of -3V and a sub-threshold swing of 0.45 V/dec. (C) 2010 Elsevier Ltd. All rights reserved.