Solid-State Electronics, Vol.54, No.11, 1485-1487, 2010
Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors
The photo leakage current (I-PLC) characteristic of a-Si:H TFTs under different bending strains has been studied. The larger I-PLC of a-Si:H TFTs under the outward bending strain is due to larger conductivity of a-Si:H, stemmed from the shift up of Fermi level (E-F). Experimental results show the I-PLC of a-Si:H TFTs under the outward bending strain is larger than that of flattened and inward bending a-Si:H TFTs in the density of states (DOS) limited region, stemmed from the lower recombination centers present in outward bending a-Si:H material. Furthermore, the extracted smaller activity energy (E-a) of a-Si:H TFTs under the outward bending strain also confirmed the shift of E-F. (C) 2010 Elsevier Ltd. All rights reserved.