Solid-State Electronics, Vol.54, No.12, 1566-1571, 2010
Modeling the input non-quasi-static effect in small signal equivalent circuit based on charge partitioning for bipolar transistors and its impact on RF noise modeling
This paper models the input non-quasi-static (NQS) effect of bipolar transistors using charge partitioning The input NQS effect associated with the base minority carrier transport is modeled with a RC network while the input NQS effect associated with the base collector space charge region (CB SCR) carrier trans port is modeled with a RLC network With the proposed input NQS equivalent circuit model Y parameters and RF noise parameters using the van Vliet model are successfully modeled for frequencies up to f(T) The transport noise model is extended to represent the van Vliet model by using two noise related time constants which eliminates the need of Y-parameter in the description of the noise source The input NQS effect for such model is verified to be important only for frequencies above f(T)/3 Analytical Y parameter and noise solutions of a 1-D bipolar transistor at low injection level are used for validation (C) 2010 Elsevier Ltd All rights reserved