The hot-carrier degradation behavior of the lateral insulated gate bipolar transistor on SOI substrate (SOI-LIGBT) and the lateral DMOS transistor on SOI substrate (SOI LDMOS) with the same structure fully except for the doping type in drain area on different stress conditions is experimentally compared for the first time For high V-gs and low V-ds the degradation in SOI-LIGBT is much more serious than the SOI LDMOS which can be reflected by more positive V-th shift For low V-gs and high V-ds there is also much severer hot-carrier degradation at the early stress stage in SOI LIGBT according to the decrease level of R-on Experimental results have been verified by 2D TCAD numerical simulations (C) 2010 Elsevier Ltd All rights reserved