High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness

Chen WB; Cheng CH; Lin CW; Chen PC; Chin A

Solid-State Electronics, Vol.55, No.1, 64-67, 2011

DOI10.1016/j.sse.2010.09.006 Export Citation

High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness

Chen WB, Cheng CH, Lin CW, Chen PC, Chin A

We fabricated high performance gate-last TaN/La2O3/SiO2 on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm(2)/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO2-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA). (C) 2010 Elsevier Ltd. All rights reserved.

Keywords:High-kappa dielectric;Ge;EOT;Mobility