Large-grain, copper-poor CuInGaSe2 (CIGS) films are favored in the fabrication of highly efficient solar cells. However, the degradation of cell performance caused by residual copper selenide (Cu2-xSe) remains a problem. This work studies the formation and behavior of excess CuxSe and further compares the cell performance of typical copper-poor with that of copper-rich solar cells. Since excess Cu2-xSe cannot be exhausted during the growth, it fully surrounds the polycrystalline CIGS grains. Excess Cu2-xSe in the CIGS film produces serious shunt paths and causes the pn junction to be of poor quality. A short circuit in copper-rich CIGS solar cells is attributable to the conductive Cu2-xSe. The best way to ensure high-efficiency of the cells is to exhaust Cu2-xSe during growth. Otherwise, a dense, chemically treated CIGS film is required to prevent the negative effects of excess Cu2-xSe. (C) 2010 Elsevier Ltd. All rights reserved.