As a result of recent trends in processor speed and core temperature. III-V semiconductors have become a tempting replacement for Si in semiconductor logic. However, as device geometries shrink, the advantages of such a switch are put into question. In this paper we present a computational survey of III-V materials in a tri-gate nanowire MOSFET geometry as compared with Si to determine an optimal material choice for this geometry using a 3D semi-classical Monte Carlo simulation tool. We show that InSb and InAs show promise as future materials for next generation switching devices. (C) 2010 Elsevier Ltd. All rights reserved.