InXGa1-XSb has the highest hole mobility amongst all III-V semiconductors which can be enhanced further with the use of strain. The use of confinement and strain in InXGa1-XSb quantum wells lifts the degeneracy between the light and heavy hole bands which leads to reduction in the hole effective mass in the lowest occupied band and an increase in the mobility. We present magnetotransport measurements on compressively strained InXGa1-XSb and GaSb quantum wells. Hall-bar and Van de Pauw structures were fabricated and Shubnikov-de Haas oscillations in the temperature range of T = 2-10 K for magnetic fields of B = 0-9 T were measured. The reduction of effective hole mass with strain was quantified. These results are in excellent agreement with modeling results from band structure calculations of the effective hole mass in the presence of strain and confinement. (C) 2011 Elsevier Ltd. All rights reserved.