Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching

Yang JJ; Strachan JP; Xia QF; Ohlberg DAA; Kuekes PJ; Kelley RD; Stickle WF; Stewart DR; Medeiros-Ribeiro G; Williams RS

Advanced Materials, Vol.22, No.36, 4034-4038, 2010

DOI10.1002/adma.201000663 Export Citation

Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching

Yang JJ, Strachan JP, Xia QF, Ohlberg DAA, Kuekes PJ, Kelley RD, Stickle WF, Stewart DR, Medeiros-Ribeiro G, Williams RS

Thermal diffusion of Ti through Pt electrode forms Ti atom channels of 1 nm diameter along Pt grain boundaries, seeding switching centers and controlling nanoscale memristive switching. The image shows EFTEM maps of Ti overlaid on HRTEM images for a Si/SiO2 100 nm/Ti 5 nm/Pt 15 nm sample in-situ annealed in ultrahigh vacuum at 250 degrees C for 1 hour.