A nanocavity structure is embedded inside a silicon logpile photonic crystal that demonstrates tunable absorption behavior at near visible wavelengths well beyond the absorption edge of silicon. This is due to silicon's indirect bandgap resulting in a relatively slow increase in the absorption of silicon with decreasing wavelength. The results open up the possibility of utilizing the wide, complete three dimensional photonic gap enabled by the large refractive index of silicon to create three dimensional photonic crystal based devices well into the visible regime.