화학공학소재연구정보센터
Advanced Materials, Vol.23, No.5, 644-644, 2011
Towards Gigahertz Operation: Ultrafast Low Turn-on Organic Diodes and Rectifiers Based on C-60 and Tungsten Oxide
Ultrafast organic diodes with low turn-on voltage based on a junction between C-60 and WO3 are proposed. The high electron mobility of C-60 layers and the optimal work function of hexamethyldisilazane (HMDS)-treated WO3 layers together provide ideal diode characteristics including high rectification ratio and low turn-on voltage. Ultrahigh frequency (UHF) compatible rectifiers with a low voltage drop are demonstrated with the C-60/Wo(3) diodes.