Previous Article Next Article Table of Contents Advanced Materials, Vol.23, No.8, 971-974, 2011 DOI10.1002/adma.201003641 Export Citation Room-Temperature Fabrication of Ultrathin Oxide Gate Dielectrics for Low-Voltage Operation of Organic Field-Effect Transistors Park YM, Daniel J, Heeney M, Salleo A Please enable JavaScript to view the comments powered by Disqus.
